Intel has unveiled its next-generation 18A process node, a significant leap from the Intel 3 node, promising a 25% higher frequency at ISO and 36% lower power at the same frequency. This new node will power the upcoming Panther Lake CPUs aimed at consumers and Clearwater Forest Xeon processors for servers.
Presented at the 2025 Symposium on VLSI Technology and Circuits, the 18A node brings advanced features, such as the RibbonFET (GAA) and PowerVia technologies, which help to increase performance and density while lowering power consumption.
Intel’s 18A process introduces over 30% density scaling, a full node of performance improvement, and higher design flexibility. RibbonFET technology, a departure from the older FinFET design, reduces parasitic capacitance, improves electrostatics, and allows for greater performance per footprint. Additionally, the transition to backside power delivery with PowerVia helps optimize power distribution and increases logic density.
The new node offers substantial advantages, including improved logic density, better cell utilization, and up to 10x reduction in voltage droop. With high-performance libraries offering 180nm height and low-cost libraries at 160nm, Intel 18A ensures better standard cell utilization. It also supports lower voltage operations, achieving up to 38% power savings at lower voltages.
Intel also emphasizes the impressive 30% improvement in SRAM density on the 18A node compared to Intel 3, making it ideal for next-gen chips. With this technology, Intel’s processors will be able to offer better performance while being more energy-efficient. In terms of frequency, the 18A node delivers 25% higher performance at 1.1V compared to Intel 3, supporting low-voltage operations below 0.65V for further power savings. While Intel remains optimistic about the future with further improvements on the horizon, skepticism remains about its ability to meet the high expectations set by previous announcements.