SK hynix is gearing up to provide 24 Gb GDDR7 memory modules, bringing a significant increase in VRAM capacities for next-gen GPUs. During its recent 2Q25 earnings call, the company shared insights into its progress in the DRAM/Memory sector.
The earnings report showed higher-than-expected shipments of DRAM and NAND flash, driving their best quarterly results in recent times.
The standout announcement was the introduction of the 24 Gb GDDR7 memory modules, which will elevate the VRAM capacities of upcoming graphics cards. Compared to the current 16Gb (2 GB) dies, the 24Gb (3 GB) modules will provide a 50% increase in memory capacity, allowing for more room to power intensive AI workloads and next-gen gaming applications. Additionally, GDDR7 is expected to push speed limits, with 30+ Gbps speeds becoming increasingly mainstream. While 40+ Gbps speeds are not expected soon, these advancements in memory capacity will undoubtedly boost performance.
Major GPU manufacturers, including NVIDIA, will have the flexibility to choose from various memory partners, such as SK hynix, Samsung, and Micron. While Samsung has already started producing these memory modules, they were also spotted in online listings. The new memory will likely power NVIDIA’s upcoming “RTX 50 SUPER” series graphics cards, which are expected to launch later this year or early next year.
Beyond GDDR7, SK hynix is also working on ensuring a timely supply of HBM4 memory for the HPC and AI sectors. The company plans to double its HBM output from the previous year, with NVIDIA and AMD expected to incorporate HBM4 into their next-gen products, like the Rubin and MI400 series. Initial evaluations of HBM4 are already underway, and SK hynix is preparing for mass production of these cutting-edge memory solutions. This push for GDDR7 and HBM4 is part of the company’s broader strategy to enhance its leadership in the AI memory market, offering diverse solutions tailored to future technological needs.